CMP cleaning composition with microbial inhibitor

ABSTRACT

An antimicrobial cleaning composition and methods for cleaning semiconductor substrates, particularly after chemical mechanical planarization or polishing, are provided. In one embodiment, the cleaning composition combines a solvent, a cleaning agent such as a hydroxycarboxylic acid or salt thereof, and at least one antimicrobial agent resulting in a cleaning composition in which microbial growth is inhibited. Examples of suitable antimicrobial agents include a benzoic acid or salt such as potassium or ammonium benzoate, and sorbic acid or salt such as potassium sorbate. The composition is useful for cleaning a wafer and particularly for removing residual particles after a conductive layer has been planarized to a dielectric layer under the conductive layer in a chemical mechanical planarization of a semiconductor wafer with abrasive slurry particles, particularly after a CMP of copper or aluminum films. Use of the cleaning composition advantageously inhibits microbial growth in the cleaning solution and deposition on the cleaned planarized surface.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a division of U.S. Ser. No. 09/981,431, filed Oct.16, 2001, pending.

FIELD OF THE INVENTION

The present invention relates generally to the field of semiconductordevice fabrication, and more particularly to cleaning a surface of asemiconductor substrate, including a substrate that has been subjectedto chemical mechanical polishing or planarizing.

BACKGROUND OF THE INVENTION

The use of copper metallization in semiconductor devices is becomingmore preferred as a replacement for aluminum. The lower resistivity ofcopper versus aluminum (<2 μΩ-cm versus >3 μΩ-cm) enables smaller linewidths and depths. Thinner metal lines also reduce capacitance betweenlines, reducing overall power consumption. Because copper is difficultto dry etch, damascene or dual-damascene integration schemes arepreferred.

FIG. 1 illustrates a portion of a semiconductor wafer 10 comprising asubstrate 12, a dielectric layer 14 such as silicon dioxide (SiO₂),phosphosilicate glass (PSG), borosilicate glass (BSG), andborophosphosilicate glass (BPSG), with vias/trenches 16 etched into thedielectric layer 14. A thin layer 18 of a barrier material (e.g.,tantalum, titanium, or titanium nitride) is deposited over thedielectric layer and into the openings 16. A copper layer 20 is thendeposited over the barrier layer 18 by conventional methods such aschemical vapor deposition (CVD), physical vapor deposition (PVD), andelectroplating, to fill the openings 16.

To electrically isolate the copper interconnects, excess copper layer 20and barrier layer 18 is removed, typically by chemical mechanicalpolishing or planarization (CMP), as shown in FIG. 2. CMP processes areabrasive techniques that are frequently used to remove material from orplanarize the surface layers of a wafer during fabrication of integratedcircuit devices. Typically, a wafer is pressed against a polishing padin a slurry solution under controlled conditions. The slurry solutiongenerally contains abrasive particles that mechanically remove thesurface layer and may contain chemical agents, such as an oxidant suchas hydrogen peroxide, and abrasive particles such as aluminum oxide(alumina), titanium dioxide, silicon dioxide, and/or cerium dioxide,that abrade the surface layer. Planarizing the wafer produces residualparticles 24 including metal particle accumulations, residual abrasiveslurry particles, and other types of residual particles that aregenerally loose and unattached to the planarized surface 26. Surfaceattraction can vary, and some particles may be embedded in the surface26.

After a CMP process, the planarized surface layer 26 is then cleaned toremove residual chemicals and particles that remain on the wafersurface. Post-planarization cleaning can be performed using variousmethods depending on the composition of the layer and any residualchemicals and particles that may be present. The cleaning methods aregenerally wet cleaning processes that include chemical cleaning,mechanical scrubbing, and other surface agitation techniques. Theobjective in the cleaning process is to provide a wafer surface that isfree of slurry particles, organic residues and trace metals ions,without introducing defects to the wafer surface.

The current technology for metal CMP post-cleaning uses mechanical brushscrubbers in conjunction with deionized water and/or cleaning solutions,and/or immersion in a vibrational bath. In an exemplary process, the CMPwafers are rinsed, immersed in a megasonics bath, and then subjected todouble-sided brush scrubbing using a cleaning solution to scrub bothsides of the wafer.

Cleaning wafers after copper CMP presents various challenges, includingissues of corrosion and particle removal that must be addressed.Aluminum CMP post-cleans that utilize ozonated deionized (DI) water orother oxidizing media passivation between polish and post-cleans, arenot functional for a copper CMP post-clean because of high coppercorrosion rates in such media. Processing of copper CMP wafers using alow-pH aluminum scrub leaves high levels of alumina slurry residuals,which can cause problems such as brush loading (i.e., adherence ofalumina particles to the brush). In addition, exposure to DI water mustbe minimized for copper CMP polished lots to prevent deionized (DI)water corrosion.

A cleaning solution comprising dilute ammonium citrate can be used forcopper CMP post-clean processes. One example of a copper CMP cleaningsolution comprises water, an ammonium salt of a hydroxycarboxylic acidsuch as ammonium citrate, a dicarboxylic acid such as oxalic acid andmalonic acid, and optionally a small amount of ammonia fluoride orhydrofluoric acid, in an acidic pH of about 3.0 to about 6.0. Ammoniumcitrate solutions have been found to disperse alumina and silica slurryparticles, and do not promote corrosion of copper. In addition, suchsolutions are relatively inexpensive.

However, a drawback of ammonium citrate cleaning solutions is theirnutritional appeal to certain strains of bacteria, for example, Bacillussp. Cleaning agents such as ammonium citrate can support microbialactivity and/or growth in solution. If present in the cleaning media,such bacteria can be carried to the wafer during processing. Once there,biosorption of bacteria to the copper surface can make removal of thebacteria very difficult. Such bacterial contamination can be detected,for example, by SEM inspection.

One potential technique to remove bacterial contamination is to removeorganic contaminants with a peroxide flush of the system. However,residual peroxide in the lines can result in copper erosion.

Therefore, it would be desirable to provide a cleaning composition thatinhibits growth of bacteria in the solution without hampering theprocess performance of the solution.

SUMMARY OF THE INVENTION

The present invention provides a cleaning composition and methods forcleaning semiconductor substrates, particularly after chemicalmechanical planarization or polishing (CMP) of copper or aluminum films,and inhibiting the bacterial growth on the planarized substrates.

In one aspect, the present invention provides a cleaning composition. Inone embodiment, the cleaning composition combines a solvent, a cleaningagent, and at least one antimicrobial agent, for cleaning the surface ofa semiconductor substrate. The cleaning agent comprises ahydroxycarboxylic acid and/or salt thereof, for example, citric acid andcitric acid salts such as ammonium citrate and tetraalkylammoniumcitrate. Such cleaning agents are useful for dispersing alumina orsilica slurry particles from a semiconductive substrate, but alsosupport microbial activity or growth. The antimicrobial agent inhibitsmicrobial activity or growth within the cleaning composition. Theantimicrobial agent is preferably benzoic acid, sorbic acid, a salt ofsuch acids, or a mixture thereof. The solvent is preferably deionizedwater, although an organic solvent can also be used. The compositionpreferably has an acidic pH of about 4.5 to about 6.5. The cleaningcomposition can comprise a pH buffering agent such as ammonium hydroxideand tetraalkylammonium hydroxide, to adjust the pH of the mixture.

In one embodiment, the cleaning composition comprises a mixture of acleaning agent and an antimicrobial agent in amounts relative to oneanother such that microbial growth within the cleaning composition isinhibited, and when the composition is in contact with both a metalconductive structure and a dielectric layer, residual particles areremoved therefrom with no significant defects to the conductivestructure or the dielectric layer, and microbial deposition on thecleaned surface is inhibited.

In another aspect, the invention provides methods for cleaning asemiconductor substrate. In one embodiment, the method comprisescontacting a surface of the semiconductor wafer with a cleaningcomposition according to the invention that comprises a cleaning agentand an antimicrobial agent at a temperature and a time effective toclean the semiconductor wafer surface. Use of the cleaning compositionresults in inhibited microbial growth in the cleaning solution andtherefore minimizing bacterial residue on the cleaned surface of thesemiconductor wafer.

In another embodiment, the method of the invention is directed tocleaning planarized surfaces of a semiconductor wafer having metallicfeatures (conductive features) such as interlayer connectors orconducting lines. The surface can comprise, for example, a metal such ascopper, aluminum, platinum, titanium, silver, tungsten and/or tantalum,a dielectric such as silica, borophosphosilicate glass (BPSG),borosilicate glass (BSG), or phosphosilicate glass, carbon-doped silica,porous silica, and/or a low k dielectric such as silicon dioxidedeposited by plasma enhanced chemical vapor deposition (PECVD), aspin-coat process, or decomposition from a tetraethylorthosilicate(TEOS) precursor. After such a wafer has been planarized, residualparticles, for example, from the slurry, metal features, dielectricmaterial, pad and wafer, remain loose on the planarized surface.

The method comprises contacting the planarized surface of the wafer witha cleaning solution comprising a cleaning agent and an antimicrobialagent, at a temperature and for a time effective to remove at least aportion of the residual particles from the planarized surface of thewafer. In an embodiment of the method, the cleaning composition isapplied to a semiconductor substrate after the formation of copper oraluminum interconnects and a CMP of the interconnects.

The method provides a post-CMP cleaning process that removes residualcopper or aluminum accumulations, other residual metals such asplatinum, titanium and tantalum, particles of alumina, silica or otherabrasive particles, and other particles from the surface of a wafer, andfurther provides an antimicrobial action to prevent growth of bacteriaand other microbes which can otherwise deposit on the surface of thecleaned substrate.

The wafer can be contacted with the cleaning composition, for example,by spraying the wafer with the cleaning composition, flowing thecleaning composition over the wafer, and/or placing the wafer in asolvent bath containing the cleaning composition including dipping thewafer in the bath. In the use of a bath of the cleaning composition, atleast a portion of the wafer substrate can be submerged in the bath fora time effective to clean the surface of the substrate. The submergedportion can be brought into frictional contact with a brush or polishingpad to remove residual particles from the planarized surface byscrubbing to clean the surface of the substrate. A vibrational energycan also be imparted to the solvent bath to remove residual particlesfrom the planarized surface. In addition, the semiconductor substratecan be placed in a brush cleaning tool wherein the wafer surface isscrubbed while contacting the cleaning composition.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings, which are forillustrative purposes only. Throughout the following views, thereference numerals will be used in the drawings, and the same referencenumerals will be used throughout the several views and in thedescription to indicate same or like parts.

FIG. 1 is a diagrammatic cross-sectional view of a prior artsemiconductor wafer fragment at a preliminary step of a CMP processingsequence.

FIG. 2 is a view of the wafer fragment of FIG. 1 after a CMP processstep showing residual particles on the planarized surface.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention provides cleaning processing and compositions forremoving residual particles remaining after polishing metal-containinglayers, particularly for cleaning polished surfaces of copper oraluminum features such as interlayer connectors (interconnects) orconducting lines. In particular, the present invention provides anantimicrobial cleaning composition that is formulated to inhibitmicrobial growth within the composition and minimize deposition ofmicrobes onto polished metal features and planarized surfaces that canresult from the use of cleaning compositions containinghydroxycarboxylic acids and/or salts thereof such as citric acid and/orcitric acid salts, in a post-CMP cleaning process.

The invention will be described for the purpose of illustrating thepresent preferred embodiments only and not for purposes of limiting thesame. The processing steps described herein are used in the fabricationof semiconductor devices in accordance with the present invention. Itshould be readily apparent that the processing steps are only a portionof the entire process flow for manufacturing integrated circuit (IC)devices.

In the current application, the terms “semiconductive wafer fragment” or“wafer fragment” or “wafer” will be understood to mean any constructioncomprising semiconductor material, including but not limited to bulksemiconductive materials such as a semiconductor wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structureincluding, but not limited to, the semiconductive wafer fragments orwafers described above. All percentages are by weight unless otherwiseindicated.

As described hereinabove, planarizing the wafer 10 produces residualparticles 24 on the planarized surface 26. Target contaminants of whichthe cleaning composition and method of the present invention are usefulin removing include, particularly, copper (Cu), aluminum (Al), platinum(Pt), tungsten (W), silver (Ag), titanium (Ti), and tantalum (Ta), andoxides that are used as abrasive particles, including alumina, silica,and similar particulates.

In one embodiment, the cleaning composition of the invention comprises amixture in the form of a solution comprising a cleaning agent, one ormore antimicrobial agents, and solvent, in amounts relative to oneanother such that microbial growth is inhibited within the aqueoussolution, and when the composition is in contact with a copper oraluminum conductive feature and a dielectric layer, residual particlesand contaminants are removed therefrom with no significant defects tothe metal feature or the dielectric layer, and bacterial and othermicrobial growth and deposition on the contacted surfaces is inhibited.

The cleaning agent comprises an organic compound that provides aneffective negative zeta potential for critical surfaces such as slurryparticles, wafer surface and brush surface, such that the electrostaticforces between the residual particles and the planarized surfaces aremade repulsive, causing the particles to form a dispersion in thecleaning solution and be removed from the planarized surface. Examplesand preferred cleaning agents comprise hydroxycarboxylic acids such ascitric acid, malic acid (hydroxysuccinic acid), tartaric acid, glycolicacid, lactic acid, tartronic acid (hydroxypropanedioic acid), and saltsof such acids. Preferred hydroxycarboxylic acid salts include ammoniumcitrate (mono- or dibasic), and tetraalkylammonium citrates (mono- ordibasic) such as tetramethylammonium citrate, tetraethylammoniumcitrate, tetrabutylammonium citrate, tetrapropylammonium citrate,ammonium hydrogen malate, ammonium tartrate, ammonium glycolate,ammonium lactate, ammonium tartronate, among others. The use of theforegoing hydroxycarboxylic acids and salts as a dispersant provides adesirable performance of the cleaning composition in effectivelyremoving contaminants and residual particles such as alumina and silicaslurry particles, particularly in the use of a brush cleaning tool, andalso provides an environment that minimizes copper/aluminum corrosion.

An antimicrobial agent is included in the cleaning composition toinhibit growth of Bacillus sp. and other bacteria, mold and othermicrobes, within the cleaning composition and on the surface of thecleaned substrate and planarized features.

Examples and preferred antimicrobial agents include sorbic acid, benzoicacid, and salts of such acids including, for example, ammonium benzoate,potassium benzoate, a tetraalkylammonium benzoate such astetramethylammonium benzoate, ammonium sorbate, potassium sorbate, atetraalkylammonium sorbate such as tetramethylammonium sorbate; alkylparahydroxybenzoates such as methylparahydroxybenzoate (methylparaben),ethylparahydroxybenzoate (ethylparaben), propylparahydroxybenzoate(propylparaben), n-heptylparahydroxybenzoate (heptylparaben), andsimilar esters; sulfites such as sulfur dioxide, potassium bisulfite,and potassium metabisulfite; and mixtures thereof. A preferredantimicrobial agent comprises a mixture of potassium sorbate and atleast one of ammonium benzoate and potassium benzoate.

The solvent is preferably water, but can also be an organic solvent, ora combination thereof. Suitable organic solvents include methanol,ethanol, n-propanol, iso-propanol, n-butanol, t-butanol, sec-butanol,ethylene glycol, propylene glycol, and other like hydroxyl-containingsolvents. Preferably, the cleaning composition is an aqueous mixture ofthe cleaning agent and the antimicrobial agent in water, preferablydeionized (DI) water.

The composition preferably has a pH of about 4.5 to about 6.5,preferably a pH of about 5 to about 6. If the pH of the cleaningcomposition becomes too high or too low, the cleaning ability of thecomposition can be impaired and the passivating ability, or ability ofthe solution to maintain an environment that protects the exposed copper(or aluminum) structures, can be hindered. The pH of the cleaningcomposition can be adjusted to the preferred range by adjusting therelative composition with respect to primary acidic or basicconstituents. These may include citric acid, ammonium hydroxide or atetraalkylammonium hydroxide such as tetramethylammonium hydroxide.

Optional components include a surfactant to help disperse the residualparticles and make them easier to remove. Surfactants useful in thecleaning composition include, for example, betaines and sulfobetainessuch as alkyl betaines, amidoalkyl betaines, alkyl sulfobetaines, andamidoalkyl sulfobetaines; aminocarboxylic acid derivatives such asamphoglycinates, amphopropionates, amphodiglycinates, andamphodipropiones; amine oxides such as alkyl amine oxides and alkylamidoalkylamine oxides; fluoroalkyl sulfonates and fluorinated alkylamphoterics; ethoxylates such as ethoxylated alkylmethyl quaternaryammonium chloride, ethoxylated polyoxypropylene, and polyoxyethylenenonylphenyl ether phosphate; quaternary ammonium salts such ascetyltrimethyl ammonium bromide; and mixtures thereof. An example andpreferred surfactant is Rhodafac RE-610, manufactured by AshlandChemical Company.

Although not preferred, additional additives can be added to thecleaning composition. For example, a corrosion inhibitor such asbenzotriazole (BTA), can be included to enhance corrosion inhibition.Other additives include chelating agents such as EDTA; oxidants such asozone, hydrogen peroxide and the like; antioxidants such as ascorbicacid or its salt; and the like.

The antimicrobial cleaning compositions of the invention can be preparedby combining, in any order, the cleaning agent, the antimicrobialagent(s), and the solvent, and optional additives as desired. Ahydroxycarboxylic acid salt such as a citric acid salt can be added inthe form of a solution, preferably an about 5% to about 20% solution,and more preferably an about 10% solution.

In one embodiment, the cleaning composition is an acidic solutioncomprising about 0.02 to about 1.5% by weight of a cleaning agent, about0.005 to about 0.3% by weight of an antimicrobial agent, with thebalance being water or other solvent, the % by weight amounts based onthe total weight of the cleaning composition. In a preferred embodiment,the cleaning composition comprises about 0.05 to about 0.5% by weight ofa cleaning agent, about 0.01 to about 0.2% by weight of an antimicrobialagent, and about 90 to about 99% by weight solvent. In a furtherpreferred embodiment, the cleaning composition comprises about 0.1 toabout 0.2% by weight of a cleaning agent, about 0.03 to about 0.1% byweight of an antimicrobial agent, and about 99% by weight solvent.

An example and preferred embodiment of the cleaning composition is anaqueous acidic solution comprising about 0.1 to about 0.2% by weight ofa cleaning agent comprising a hydroxycarboxylic acid or salt thereof,preferably citric acid or a citric acid salt, and preferably ammoniumcitrate (from a 10% solution); the antimicrobial agent as a mixture ofabout 0.03 to about 0.1% by weight each of ammonium benzoate andpotassium benzoate with about 0.03 to about 0.1% by weight of potassiumsorbate or ammonium sorbate; and the balance deionized water.

The amounts of the components can vary depending on the type ofequipment used in the cleaning process. For example, in a scrubber,polisher or offload station, the cleaning solution supply tank cancontain about 20 liters solution containing about 200 ml of a 10%ammonium citrate solution (0.1% by weight), about 6 g potassium sorbate(0.03% by weight), and about 6 g potassium benzoate (0.03% by weight),and the balance DI water. For a megasonic tank, the recirculatingcleaning solution can contain the same solution, or active ingredientsup to 10 times the concentration used in spray applications.

An embodiment of a method of the invention using the presentantimicrobial cleaning composition is described with reference tocleaning a semiconductor substrate having planarization residue afterthe formation of copper interconnects and a CMP of the copperinterconnects. Although described as copper in the illustrated example,the interconnect but can be made from aluminum or other highlyconductive material such as silver. It should be noted the processes forforming copper or other metal interconnects in semiconductor devicefabrication are well known in the art and, therefore, not described indetailed herein.

As described with reference to FIG. 1, after the copper interconnects onthe semiconductor substrate have been planarized by CMP, the substrateis cleaned to remove contaminants from the surface of the substrate. Itis noted that the wafer fragment 10, illustrated in FIG. 1, can comprisea semiconductor wafer substrate or the wafer along with various processlayers formed thereon, including one or more semiconductor layers orother formations, and active or operable portions of semiconductordevices.

To remove the residual particles 24, the polished wafers can beprocessed through a conventional wet cleaning process known and used inthe art using the cleaning composition of the invention. Any suitablemeans or apparatus can be used to carry out the cleaning processaccording to the invention.

The cleaning composition can be applied to the wafer in various ways.For example, the cleaning composition in the form of a solution can besprayed onto the substrate, applied to the substrate through brushes, ordripped onto the substrate, among others. The semiconductor wafer can beplaced into a bath of the cleaning composition, whereupon planarizationresidue will become suspended, displaced and/or dissolved in thecleaning composition. A brush can be used in combination with thecleaning composition, to provide a scrubbing action to remove residuesfrom the wafer substrate. Scrubbers for use in the removal ofplanarization residues are commercially available and well known in theart. The wafer can be subjected to one or more scrubbing steps using thecleaning composition using one- or two-sided brushing, to remove theresidual particles and contaminants from the planarized substrate. Thecleaning bath and/or the scrubbing apparatus can additionally includeultrasonic or, preferably, megasonic enhancement involving generating amegasonic signal (0.2-5 MHz), to agitate the cleaning solution againstthe surface of the substrate and dislodge particles from the planarizedsurfaces. Such apparatus and mechanisms are known in the art, asdescribed, for example, in U.S. Pat. No. 6,273,100 (Andreas et al., toMicron Technology, Inc.). The temperature of the cleaning compositionpreferably ranges from about 10° C. to about 30° C. The length of thecontact of the cleaning composition with the wafer surface preferablyranges from about 15 seconds to about 60 minutes, and preferably about40 seconds to about 3 minutes. Preferably, the total copper budget atthe end of the cleaning process is less than about 50 angstroms erosion.

In an example and preferred process, the wafer is dipped in a megasonicbath comprising the cleaning solution of the invention for about 30 toabout 60 seconds at ambient temperature (20-30° C.), and then subjectedto one or more scrubbing steps using the cleaning composition andtwo-sided brushing to remove residual particles from the CMP process.

The cleaning process results in a cleaned planarized surface withmetallic features such as interconnects or conducting lines, andinhibited microbial deposition on the planarized surfaces.

The following Examples are provided to illustrate the present invention,and should not be viewed as limiting the invention in any manner.

COMPARATIVE EXAMPLE AND EXAMPLES Preparation of Cleaning Compositions

Stock solutions of potassium sorbate and potassium benzoate wereprepared from dry salts. Mixtures of dilute ammonium citrate with theadditive salts were prepared according to Table 2. The resulting stockmixtures contained 1% ammonium citrate with 0.5% sorbate, benzoate, orboth sorbate and benzoate, and 1% ammonium citrate with 0.1% sorbate,benzoate, or both sorbate and benzoate. All measurements were by weight.TABLE 2 Preparation of experimental stock solutions (all weightmeasurements in grams). Solution 10% ammonium 5% potassium 5% potassiumTotal Name citrate sorbate benzoate Weight A 10.02 9.99 0.00 100.0 B10.02 1.99 0.00 100.1 C 10.03 0.00 9.97 100.0 D 10.03 0.00 2.00 100.1 E10.30 9.75 9.96 100.5 F 10.13 1.96 1.98 100.2

Copper Corrosion

Copper post-CMP cleans were performed using a 0.1% ammonium citratecleaning solution. To measure corrosion of copper in the experimentalsolutions, each mixture was diluted 10:1. Solutions of 0.1% ammoniumcitrate (without additives) and neat DI water were used for comparison.Each sample was measured for pH. All pH measurements were within thedesired region of the Pourbaix diagram for copper cleaning (adapted fromBeverskog and Puigdomenech, J. Electrochem. Soc. 144:3476-83 (1997)).

To test for copper corrosion, small segments of polished copper testwafer were immersed in each solution for 90 minutes under ambientconditions. Each solution was analyzed by inductively coupled plasmamass spectrometer (ICP-MS) for dissolved copper. The test pieces werecross-sectioned for SEM inspection of the copper surface.

Table 3 summarizes the sample preparation, pH and ICP-MS results forthis test, along with estimated etch rates based on the ICP-MS results.Although the DI water sample had the lowest measurable dissolved copper,it showed distinctive edge corrosion by SEM because the corrosionproduct (copper oxide) is soluble in acidic media but not very solublein DI water. Overall, every ammonium citrate mixture corrosion testpiece looked similar to the non-processed wafer piece. The resultsindicated that all modified cleaning solutions met engineeringrequirements of minimal copper corrosion. TABLE 3 Experimental setup andresults for corrosion dip tests. % Cu Cu Corrosion Citrate/Sorbate/Sample Conc. Rate Solution Benzoate Wt. Soln Wt pH (ppm) (Å/min.) A/100.1/0.05/0 1.0759 8.387 5.24 0.786 0.42 B/10 0.1/0.01/0 1.0012 7.6435.08 1.49 0.67 C/10 0.1/0/0.05 1.0636 8.518 5.08 1.32 0.74 D/100.1/0/0.01 1.4199 10.914 5.10 1.6 1.46 E/10 0.1/0.05/0.05 1.0662 9.9735.27 0.564 0.35 F/10 0.1/0.01/0.01 1.1582 12.026 5.12 1.46 1.20 Control0.1/0.01/0.01 1.0426 8.223 5.00 2.26 1.14 DI   0/0/0 1.0138 10.026 7.000.178 0.11

Particle Dispersion

For the particle dispersion test, 100 ml samples of modified cleaningsolution (at 0.1% nominal ammonium citrate concentration) were prepared.To each sample was added 1.00 ml of alumina slurry. This quantity was inexcess of the amount of alumina that can be dispersed by the cleaningsolution, therefore saturating the dispersion power of each solution.Each solution was agitated, then set aside. At specific intervals, thesupernatant of each mixture was sampled and analyzed by inductivelycoupled plasma optical emission spectrometer (ICP-OES) for aluminum. Theraw data are given in Table 4. A plot of normalized dispersion (relativeto the 0.1% control ammonium citrate) versus time was made. Allexperimental solutions dispersed alumina as well as the control solutionwithin the testing period. The raw values at 7 days was higher than 4days, which could have been due to accidental agitation, loss of samplevolume, or internal evaporation/condensation. The results indicated thatall modified solutions met engineering requirement of dispersing aluminaslurry particles. TABLE 4 ICP-OES measurement of dispersed alumina. Allvalues are ng/g aluminum. Sample 0 Days 1 Day 2 Days 4 Days 7 Days A/1046250 4390 6270 7668 15545 B/10 34500 5060 5490 7653 16250 C/10 465004800 6170 7612 10540 D/10 41000 4800 6240 7550 10780 E/10 47000 53006440 7861 10270 F/10 35250 4900 6380 7825 10990 CTRL 33000 5170 58807722 10590

Summary

Beaker-level tests confirmed that salts of sorbic acid and benzoic acidcan be added to ammonium citrate without adversely impacting theparticle-dispersing or low copper etch rate properties of an ammoniumcitrate post-CMP cleaning solution. Dilute salts of sorbic acid andbenzoic acid can be added to ammonium citrate to inhibit the growth ofbacteria in the cleaning solution. Particle dispersion and coppercorrosion tests at the beaker level showed compatibility of the spikedsolutions with the current performance criteria of the original ammoniumcitrate solution.

Subsequent tests in the process tool has shown a decreased incidence ofbacterial residue found by inspection of polished wafers.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method for cleaning a surface of a semiconductor wafer, comprisingthe step of: contacting the wafer with a composition to remove residuefrom the wafer, the composition comprising a cleaning agent and anantimicrobial agent, wherein microbial deposition on the surface of thewafer is inhibited.
 2. A method for cleaning a surface of asemiconductor wafer, comprising the step of: contacting the wafer with acomposition to remove residue from the wafer, the composition comprisingan antimicrobial agent and a cleaning agent capable of supportingmicrobial growth, wherein microbial deposition on the surface of thewafer is inhibited.
 3. A method for cleaning a surface of asemiconductor wafer, comprising the step of: contacting the wafer with acomposition to remove residue from the wafer, the composition comprisingan antimicrobial agent and a cleaning agent selected from the groupconsisting of hydroxycarboxylic acids and salts thereof, whereinmicrobial deposition on the surface of the wafer is inhibited.
 4. Themethod of claim 3, wherein the cleaning agent is selected from the groupconsisting of citric acid, malic acid, tartaric acid, lactic acid,glycolic acid, tartronic acid, and salts thereof.
 5. The method of claim3, wherein the cleaning agent is selected from the group consisting ofcitric acid, ammonium citrate, and tetraalkylammonium citrate.
 6. Themethod of claim 3, wherein the composition further comprises a bufferingagent.
 7. The method of claim 6, wherein the buffering agent is selectedfrom the group consisting of ammonium hydroxide, and tetraalkylammoniumhydroxide.
 8. The method of claim 3, wherein the composition has a pH ofabout 4.5-6.5.
 9. The method of claim 3, wherein the composition has apH of about 5-6.
 10. A method for cleaning a surface of a semiconductorwafer, comprising the step of: contacting the semiconductor wafer with acomposition to remove residue from the wafer, the composition comprisinga cleaning agent and an antimicrobial agent selected from the groupconsisting of benzoic acid, sorbic acid, and salts thereof, whereinmicrobial deposition on the surface of the wafer is inhibited.
 11. Themethod of claim 10, wherein the antimicrobial agent is selected from thegroup consisting of benzoic acid, ammonium benzoate, potassium benzoate,and tetraalkylammonium benzoate.
 12. The method of claim 1 1, whereinthe antimicrobial agent is selected from the group consisting of sorbicacid, potassium sorbate, ammonium sorbate, and tetraalkylammoniumsorbate.
 13. A method for cleaning a surface of a semiconductor wafer,comprising the step of: contacting the semiconductor wafer with acomposition to remove residue from the wafer, the composition comprisinga cleaning agent, and an antimicrobial agent selected from the groupconsisting of sulfur dioxide, sulfites, and alkyl parahydroxybenzoates,wherein microbial deposition on the surface of the wafer is inhibited.14. The method of claim 13, wherein the antimicrobial agent is a sulfiteselected from the group consisting of potassium bisulfite and potassiummetabisulfite.
 15. The method of claim 13, wherein the antimicrobialagent is an alkyl parahydroxybenzoate selected from the group consistingof methylparahydroxybenzoate, ethylparahydroxybenzoate,propylparahydroxybenzoate, and n-heptylparahydroxybenzoate.
 16. A methodfor cleaning a surface of a semiconductor wafer, comprising the step of:contacting the wafer with a composition to remove residue from andinhibit microbial deposition on the surface of the wafer, thecomposition comprising, based on the total weight of the composition:about 0.02-1.5% by weight cleaning agent; about 0.005-0.3% by weightantimicrobial agent; and the balance solvent.
 17. The method of claim16, wherein the composition comprises about 90-99% by weight solvent.18. The method of claim 16, wherein the solvent is selected from thegroup consisting of water and organic solvents.
 19. A method of cleaninga surface of a semiconductor wafer, the method comprising the step of:contacting the wafer with a composition to remove residue from andinhibit microbial deposition on the surface of the wafer, thecomposition comprising, based on the total weight of the composition:about 0.02-1.5% by weight cleaning agent selected from the groupconsisting of hydroxycarboxylic acids and salts thereof; about0.005-0.3% by weight of a first antimicrobial agent selected from thegroup consisting of benzoic acid and salts thereof; about 0.005-0.3% byweight of a second antimicrobial agent selected from the groupconsisting of sorbic acid and salts thereof; and the balance solvent.20. A method for cleaning a planarized or polished surface of asemiconductor wafer comprising an exposed metal conductive structure anda dielectric layer, the method comprising the step of: contacting thesurface of the wafer with a composition comprising a mixture of acleaning agent, an antimicrobial agent, and solvent, wherein residualparticles are removed from the surface of the wafer with no substantialdefects to the conductive structure or the dielectric layer, andmicrobial growth within the composition and on the surface of the waferis inhibited.
 21. The method of claim 20, wherein the residual particlescomprise at least one of residual metal particles, abrasive particles,and dielectric particles.
 22. The method of claim 20, wherein the metalconductive structure comprises a metal selected from the groupconsisting of copper, aluminum, silver, tungsten, platinum, titanium,and tantalum.
 23. The method of claim 20, wherein the dielectric layercomprises a material selected from the group consisting of silicondioxide, phosphosilicate glass, borosilicate glass, borophosphosilicateglass, carbon-doped silica, and porous silica.
 24. The method of claim20, wherein the residual particles comprise abrasive slurry particles.25. The method of claim 24, wherein the abrasive slurry particlescomprise a material selected from the group consisting of aluminumoxide, titanium dioxide, silicon dioxide, cerium dioxide, and mixturesthereof.
 26. A method for cleaning a surface of a semiconductor wafer,comprising the step of: contacting the wafer with a composition toremove residual particles from the surface of the wafer, the compositioncomprising a cleaning agent capable of supporting microbial growth anddispersing abrasive slurry particles, and an effective amount of anantimicrobial agent to inhibit bacterial growth in the composition andon the surface of the wafer.
 27. A method for cleaning a surface of asemiconductor wafer, comprising the step of: contacting the wafer with acomposition to remove residue particles from the wafer, the compositioncomprising a cleaning agent capable of supporting microbial growth anddispersing abrasive slurry particles, an effective amount of anantimicrobial agent to inhibit bacterial growth in the composition andon the surface of the wafer when applied thereto, and effective amountsof one or more of a surfactant, buffering agent, corrosion inhibitor,chelating agent, oxidizing agent, and antioxidant, wherein microbialdeposition on the surface of the wafer is inhibited.
 28. A method forremoving residue from a surface of a semiconductor wafer, the residuederived from a chemical mechanical planarization or polishing ofmaterial layers on the wafer, the method comprising the step of:contacting the wafer with a composition to remove at least a portion ofthe residue, the composition comprising a cleaning agent selected fromthe group consisting of hydroxycarboxylic acids and salts thereof, anantimicrobial agent, and solvent.
 29. The method of claim 28, whereinthe residue comprises abrasive slurry particles
 30. The method of claim29, wherein the residue comprises alumina or silica particles.
 31. Themethod of claim 28, wherein the residue comprises particles of a metalselected from the group consisting of copper, aluminum, platinum,titanium, tungsten, sliver, and tantalum.
 32. The method of claim 28,wherein the residue comprises aluminum or copper particles.
 33. Themethod of claim 28, wherein the planarized or polished material layerson the wafer comprise a metal feature and a dielectric layer.
 34. In achemical mechanical planarization of a semiconductor wafer with abrasiveslurry particles, a method of cleaning the wafer after a conductivelayer has been planarized to an underlying dielectric layer, the methodcomprising the step of: contacting the wafer with a compositioncomprising a cleaning agent and an antimicrobial agent to removeresidual particles from the planarized surface of the dielectric layerand conductive layer, wherein microbial deposition on the surface of thesubstrate is inhibited.
 35. The method of claim 34, wherein the step ofcontacting the wafer comprises spraying the wafer with the composition.36. The method of claim 34, wherein the step of contacting the wafercomprises placing the wafer in a solvent bath containing thecomposition.
 37. The method of claim 36, wherein the step of contactingthe wafer further comprises applying a vibrational energy to thecomposition to enhance removal of the residual particles from theplanarized surface.
 38. The method of claim 36, wherein the step ofcontacting the wafer comprises dipping the wafer in the solvent bathcontaining the composition.
 39. The method of claim 34, wherein the stepof contacting the wafer comprises flowing the composition over thewafer.
 40. The method of claim 34, wherein the step of contacting thewafer further comprises scrubbing the residual particles from theplanarized surface of the wafer.
 41. In a chemical mechanicalplanarization of a semiconductor wafer with abrasive slurry particles, amethod of cleaning the wafer after a conductive layer has beenplanarized to an underlying dielectric layer, the method comprising thestep of: contacting the wafer with a composition to remove residualparticles from the planarized surfaces of the dielectric layer andconductive layer, wherein microbial deposition on said surfaces isinhibited, the composition comprising about 0.02-1.5% by weight of acleaning agent, about 0.005-0.3% by weight antimicrobial agent, and thebalance water, based on the total weight of the composition.
 42. In achemical mechanical planarization of a semiconductor wafer with abrasiveslurry particles, a method of cleaning the wafer after planarizing aconductive layer to an underlying dielectric layer, the methodcomprising the step of: placing at least a portion of wafer in a bathcontaining a composition comprising a cleaning agent and anantimicrobial agent to remove residual particles from the planarizedsurfaces of the dielectric layer and conductive layer, wherein microbialdeposition on said surfaces is inhibited.
 43. The method of claim 42,wherein the step of placing the wafer in the bath comprises dipping thewafer in the cleaning composition.
 44. In a chemical mechanicalplanarization of a semiconductor wafer with abrasive slurry particles, amethod of cleaning the wafer after planarizing a conductive layer to anunderlying dielectric layer, the method comprising the step of:scrubbing the wafer in a scrubber while contacting the wafer with acomposition comprising a cleaning agent and an antimicrobial agent toremove residual particles from the planarized surfaces of the dielectriclayer and the conductive layer, wherein microbial deposition on saidsurfaces is inhibited.
 45. The method of claim 44, wherein the step ofscrubbing the wafer comprises contacting the wafer with the compositionfor up to about 3 minutes.
 46. The method of claim 44, wherein the stepof scrubbing the wafer comprises placing the wafer against a polishingpad in the presence of the cleaning composition.
 47. A method ofcleaning a planarized surface of a substrate, comprising the step of:submerging at least a portion of the substrate in a bath of a cleaningcomposition agent comprising a cleaning agent and an antimicrobial agentfor a time effective to remove residual particles from the planarizedsurface of the substrate and inhibit microbial deposition thereon.
 48. Amethod of cleaning a planarized surface of a substrate, comprising thesteps of: submerging at least a portion of the substrate in a bath of acleaning composition comprising a cleaning agent and an antimicrobialagent; and contacting the submerged portion of the substrate with abrush to remove residual particles from the planarized surface of thesubstrate; wherein contact of the surface of the substrate with thecleaning composition inhibits microbial deposition thereon.
 49. A methodof cleaning a planarized surface of a substrate, comprising the stepsof: positioning the substrate in a scrubber; and scrubbing the substratein the presence of a cleaning solution comprising a cleaning agent andan antimicrobial agent, wherein contact of the surface of the substratewith the cleaning composition removes residual particles therefrom andinhibits microbial deposition thereon.